WebIRF140 Overview 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF140 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a … WebCJAB35N03 数据表, CJAB35N03 datasheets, CJAB35N03 pdf, CJAB35N03 集成电路 : JIANGSU - N-Channel Power MOSFET ,alldatasheet, 数据表, 电子元件和半导体, 集成电路, 二极管, 三端双向可控硅 和其他半导体的
IRF140 - Infineon Technologies
Web8 www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com … WebTT Electronics is a manufacturer of IRFY140 Semiconductor parts, which can be used in a wide variety of industries and applied in standard, modified and custom solutions. https hostname wrong: should be
IRFY140 - TT Electronics MOSFET
WebN-CHANNEL POWER MOSFET, 5N90G-T2Q-T 数据表, 5N90G-T2Q-T 電路, 5N90G-T2Q-T data sheet : UTC, alldatasheet, 数据表, 电子元件和半导体, 集成电路, 二极管, 三端双向可控硅 和其他半导体的 WebDescriptions of Infineon IRF140 provided by its distributors. Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line Infineon Power Field-Effect Transistor, 28A I (D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, MODIFIED TO-3, 2 PIN Utmel Electronic WebType: n-channel Drain-to-Source Breakdown Voltage: 40 V Gate-to-Source Voltage, max: ±20 V; Drain-Source On-State Resistance, max: 4 mΩ Continuous Drain Current: 162 A Total Gate Charge: 160 nC Power Dissipation: 200 W Package: TO-220AB https hotmail.com mail